Founded in 2019, Shenzhen Xuanhui Electronics Co., Ltd. is a professional electronic components and solution service provider and a technology company for scheme development and design. Customized design and complete set of solutions for automotive electronics, wireless payment, smart city, intelligent industry and Internet of things.

The company's core products include: 2G, 3G, 4G, 5g, L16 to 24 bit sigma-delta ADC, high-precision temperature measurement, high-precision temperature control RTC, 8-bit MCU and development system, data communication interface, power management, audio power amplifier, LED driving circuit, grid driving circuit, low-power digital analog hybrid design technology. Now there are many successful high-quality chips, which are widely used in electronic watches, clocks, perpetual calendars, thermohygrometers, electronic scales, flashlights, lamps, gifts and many other electronic products.

Main products of our company:

1》 Industrial control: low power ADC, DAC, Hart modulation and demodulation chip

2》 Metering instrument: metering SOC chip and electric energy metering, metering socket, digital display voltage / current meter and multimeter solution

3》 MCU of high-precision ADC: human scale, kitchen scale, health scale, pricing scale, palm scale chip and solution

4》 Digital temperature sensor: high precision temperature measurement chip and solution

5》 Control module: special modules customized for customers, such as solar water heater, cake baking machine, etc

6》 Data communication interface: internal system data communication circuit, including single ended (SE), low dropout (LVD) and multi-mode (SE / LVD) small computer system interface (SCSI) circuits.

7》 Power management: it is a circuit that generates, distributes, protects and manages the thermal energy consumption in portable, portable and battery driven systems. It has a typical market share in portable computers, mobile phones, wireless communication devices and battery driven medical devices. The products include electroluminescent lighting driver, microprocessor monitor, USB power switch, low voltage differential regulator and high frequency switching converter.

8》 Audio power amplifier: the products include the mainstream mono and stereo power amplifier series products in the market, and provide cost-effective audio power amplifier chips for MP3 / MP4, digital photo frame, mobile phone, portable computer and other consumer electronics and communication products.

9》 LED drive circuit: various types of LED drive circuits for portable applications,

10》 Gate drive circuit: various types of gate drive circuits that drive MOSFET and IGBT. They are used in power supply, lighting and motor applications with reliable quality. The types include single tube drive, half axle drive, three-phase drive, etc., which can meet various application needs of the market.

11》 Function calculator, function calculator with perpetual calendar, and other additional functions

12》 Massager, remote control vehicle (IR and RF), soybean milk machine

13》 Multi channel clock control switch, temperature controller, computer temperature controller, counter, timer / pedometer / pedometer with radio (automatic frequency modulation, with storage and memory function).

14》 Projection clock, square clock (rotary LCD clock)

15》 Pedometer / Runner / fat pedometer

Since its establishment, the company has adhered to the purpose of "people-oriented, development and innovation, creating wealth, sharing achievements and feeding the society", and has won the trust of our customers. We will continue to introduce high-tech products, adhere to our commitment to customers' product quality and service, and grow together with customers.

Corporate culture
What are the latest Digital transistor manufacturing processes?
Title: The Latest Advancements in Digital Transistor Manufacturing ProcessesIntroduction (100 words) Digital transistors are the fundamental building blocks of modern electronic devices, enabling the processing and transmission of digital signals. Over the years, advancements in manufacturing processes have played a crucial role in enhancing the performance, efficiency, and miniaturization of digital transistors. In this article, we will explore the latest developments in digital transistor manufacturing processes, including FinFET, nanowire transistors, and tunnel field-effect transistors (TFETs), highlighting their benefits and potential applications.1. FinFET Technology (300 words) FinFET technology has emerged as a significant breakthrough in digital transistor manufacturing. It involves the creation of a three-dimensional (3D) transistor structure, where the channel is wrapped around a thin vertical fin. This design allows for better control of the transistor's behavior, reducing leakage current and improving power efficiency. FinFETs have become the standard for advanced semiconductor nodes, such as 7nm and below, due to their superior performance.The manufacturing process of FinFETs involves multiple steps, including lithography, etching, and deposition. The use of advanced lithography techniques, such as extreme ultraviolet (EUV) lithography, enables the precise patterning of the transistor's features. Additionally, the deposition of high-quality materials, such as high-k dielectrics and metal gates, ensures optimal transistor performance.2. Nanowire Transistors (300 words) Nanowire transistors represent another promising avenue in digital transistor manufacturing. These transistors are constructed using nanoscale wires as the channel, offering several advantages over traditional planar transistors. Nanowire transistors exhibit excellent electrostatic control, reduced short-channel effects, and improved scalability.The manufacturing process of nanowire transistors involves the controlled growth of nanowires on a substrate, followed by the integration of source, drain, and gate electrodes. Techniques like chemical vapor deposition (CVD) and molecular beam epitaxy (MBE) are employed to grow high-quality nanowires. The precise alignment and positioning of the nanowires are achieved through advanced lithography and self-assembly techniques.3. Tunnel Field-Effect Transistors (TFETs) (300 words) Tunnel field-effect transistors (TFETs) are a promising alternative to conventional transistors, offering lower power consumption and improved energy efficiency. TFETs leverage quantum tunneling phenomena to enable efficient charge transport across the transistor's channel. This unique mechanism allows for reduced voltage requirements, leading to significant power savings.The manufacturing process of TFETs involves the integration of different materials with varying bandgaps to create a heterojunction structure. Techniques like molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD) are utilized to deposit high-quality materials with precise control over their composition and thickness. The fabrication of TFETs also requires advanced lithography and etching techniques to define the transistor's features accurately.4. Applications and Future Outlook (300 words) The latest advancements in digital transistor manufacturing processes have opened up new possibilities for various applications. FinFETs are widely used in high-performance computing, mobile devices, and automotive electronics, enabling faster processing speeds and improved energy efficiency. Nanowire transistors show promise in flexible electronics, wearable devices, and bioelectronics, where their unique properties can be harnessed for novel functionalities. TFETs, with their low-power characteristics, hold potential in energy harvesting, Internet of Things (IoT) devices, and battery-powered applications.Looking ahead, the continuous evolution of digital transistor manufacturing processes will focus on further miniaturization, improved performance, and reduced power consumption. Techniques like nanosheet transistors, gate-all-around (GAA) transistors, and advanced materials, such as 2D materials and carbon nanotubes, are being explored to push the boundaries of digital transistor technology.Conclusion (100 words) The latest advancements in digital transistor manufacturing processes, including FinFETs, nanowire transistors, and TFETs, have revolutionized the semiconductor industry. These technologies offer improved performance, power efficiency, and scalability, enabling the development of advanced electronic devices. As the demand for smaller, faster, and more energy-efficient devices continues to grow, the ongoing research and development in digital transistor manufacturing processes will play a crucial role in shaping the future of electronics.
How should I choose the spot Bipolar transistor?
Choosing the right bipolar transistor for a specific application can be a crucial decision. With a wide range of options available, it is important to consider various factors to ensure optimal performance and functionality. In this article, we will discuss the key considerations for selecting a bipolar transistor, including its specifications, application requirements, and other relevant factors.1. Understanding Bipolar Transistors: Before diving into the selection process, it is essential to have a basic understanding of bipolar transistors. Bipolar transistors are three-layer semiconductor devices that amplify electrical signals. They consist of a base, emitter, and collector, and are available in two types: NPN (Negative-Positive-Negative) and PNP (Positive-Negative-Positive). NPN transistors are more commonly used, but the selection process applies to both types.2. Determine the Application Requirements: The first step in choosing a bipolar transistor is to clearly define the requirements of your application. Consider the following factors:a. Voltage and Current Ratings: Determine the maximum voltage and current levels that the transistor will need to handle. Ensure that the chosen transistor can handle these ratings without exceeding its limits.b. Frequency Range: Identify the frequency range of the signals that the transistor will be amplifying or switching. Different transistors have different frequency response characteristics, so choose one that can handle the required frequency range.c. Power Dissipation: Calculate the power dissipation in the transistor to ensure it can handle the heat generated during operation. This is particularly important for high-power applications.d. Gain Requirements: Determine the desired gain (amplification) of the transistor. This will help narrow down the options based on the transistor's current gain (hFE) specifications.e. Package Type: Consider the physical size and package type of the transistor. Ensure it fits within the available space and is compatible with the circuit board or mounting method.3. Transistor Specifications: Once you have a clear understanding of your application requirements, it's time to delve into the transistor specifications. The following specifications are crucial to consider:a. Current Gain (hFE): This parameter indicates the amplification capability of the transistor. Choose a transistor with an hFE value that matches your desired gain requirements.b. Maximum Collector Current (IC): Ensure that the transistor's maximum collector current rating is higher than the expected current in your application.c. Maximum Collector-Emitter Voltage (VCEO): This specification determines the maximum voltage that can be applied across the collector and emitter terminals. Select a transistor with a VCEO rating higher than the expected voltage in your circuit.d. Frequency Response: Check the transistor's frequency response characteristics, such as the cutoff frequency (fT) and maximum frequency of operation. Ensure they meet your application's frequency requirements.e. Noise Figure: If your application requires low noise amplification, consider the transistor's noise figure specifications. Lower noise figures indicate better noise performance.4. Consider Reliability and Availability: Reliability and availability are crucial factors when selecting a transistor. Consider the manufacturer's reputation, product quality, and availability in the market. It is advisable to choose transistors from reputable manufacturers to ensure consistent performance and availability for future replacements or expansions.5. Consult Datasheets and Application Notes: Datasheets and application notes provided by the manufacturer are valuable resources for understanding the transistor's specifications, characteristics, and recommended applications. Study these documents thoroughly to gain insights into the transistor's performance and suitability for your application.6. Simulation and Prototyping: Before finalizing your choice, consider simulating the transistor's behavior using circuit simulation software. This can help verify its performance and compatibility with your circuit design. Additionally, prototyping and testing the transistor in your specific application can provide real-world performance data and validate your selection.In conclusion, selecting the right bipolar transistor involves a systematic approach that considers the application requirements, transistor specifications, reliability, and availability. By carefully evaluating these factors and consulting relevant resources, you can make an informed decision that ensures optimal performance and functionality for your circuit.
Mainstream Schottki rectifier Product Line Parameters
Title: Exploring the Mainstream Schottky Rectifier Product Line ParametersIntroduction:Schottky rectifiers are widely used in various electronic applications due to their unique characteristics and advantages over conventional rectifiers. These semiconductor devices offer low forward voltage drop, fast switching speed, and high temperature tolerance, making them ideal for power conversion and rectification purposes. In this article, we will delve into the mainstream Schottky rectifier product line parameters, discussing their key features, performance specifications, and applications.1. Forward Voltage Drop:One of the primary advantages of Schottky rectifiers is their low forward voltage drop (Vf). This parameter determines the energy loss during rectification and affects the overall efficiency of the system. Mainstream Schottky rectifiers typically exhibit Vf values ranging from 0.2V to 0.6V, depending on the current rating and device size. Lower Vf values result in reduced power dissipation and improved efficiency, making them suitable for high-frequency applications.2. Reverse Leakage Current:Reverse leakage current (Ir) is another critical parameter that determines the rectifier's ability to block reverse voltage. Schottky rectifiers generally have lower reverse leakage currents compared to conventional rectifiers, thanks to their metal-semiconductor junction structure. Mainstream Schottky rectifiers exhibit Ir values ranging from a few microamps to tens of microamps, ensuring efficient blocking of reverse voltage and minimizing power losses.3. Maximum Forward Current:The maximum forward current (If) rating specifies the maximum continuous current that a Schottky rectifier can handle without exceeding its thermal limits. Mainstream Schottky rectifiers are available in a wide range of current ratings, typically ranging from a few amperes to several tens of amperes. Higher If ratings are suitable for power-hungry applications, such as power supplies, motor drives, and inverters.4. Reverse Voltage Rating:The reverse voltage rating (Vr) indicates the maximum reverse voltage that a Schottky rectifier can withstand without breakdown. Mainstream Schottky rectifiers offer Vr ratings ranging from a few volts to several hundred volts, catering to a wide range of applications. It is crucial to select a rectifier with a Vr rating higher than the expected reverse voltage to ensure reliable operation and prevent device failure.5. Switching Speed:Schottky rectifiers are known for their fast switching speed, enabling efficient power conversion in high-frequency applications. The switching speed is determined by the rectifier's reverse recovery time (trr) and forward recovery time (tfr). Mainstream Schottky rectifiers typically exhibit trr values in the range of nanoseconds, ensuring minimal switching losses and improved system efficiency.6. Junction Temperature:The junction temperature (Tj) rating specifies the maximum temperature that a Schottky rectifier can withstand during operation without compromising its performance and reliability. Mainstream Schottky rectifiers are designed to operate at elevated temperatures, with Tj ratings ranging from 100°C to 175°C. Higher Tj ratings ensure reliable operation in demanding environments and allow for compact system designs.7. Packaging Options:Schottky rectifiers are available in various package types, including surface mount packages (SMD) and through-hole packages. Surface mount packages, such as SOD-123, SMA, and DPAK, are widely used in compact electronic devices, while through-hole packages, such as TO-220 and TO-247, are preferred for high-power applications. Mainstream Schottky rectifiers offer a wide range of packaging options to suit different application requirements.Applications:Mainstream Schottky rectifiers find applications in numerous electronic systems, including:1. Power supplies and converters: Schottky rectifiers are commonly used in switch-mode power supplies, where their low forward voltage drop and fast switching speed contribute to high efficiency and reduced power losses.2. Motor drives and inverters: Schottky rectifiers play a crucial role in motor control systems, providing efficient power conversion and rectification in variable speed drives and inverters.3. Automotive electronics: Schottky rectifiers are widely employed in automotive applications, including engine control units, lighting systems, and battery management systems, due to their high temperature tolerance and reliability.4. Renewable energy systems: Schottky rectifiers are utilized in solar inverters and wind turbine systems, where their fast switching speed and low power losses contribute to efficient power conversion.Conclusion:The mainstream Schottky rectifier product line offers a wide range of parameters and specifications to cater to diverse electronic applications. With their low forward voltage drop, fast switching speed, and high temperature tolerance, Schottky rectifiers have become an integral part of modern power conversion systems. By understanding the key parameters discussed in this article, engineers and designers can select the most suitable Schottky rectifier for their specific application requirements, ensuring optimal performance and efficiency.
Common Switch diode Popular models
Title: Exploring Common Switch Diode Models: A Comprehensive GuideIntroduction (100 words) Switch diodes are essential components in electronic circuits, allowing the flow of current in one direction while blocking it in the opposite direction. They play a crucial role in various applications, including power supplies, signal processing, and digital logic circuits. In this article, we will delve into the world of switch diodes, exploring some of the most popular models available in the market. By understanding their features, specifications, and applications, you will be better equipped to choose the right switch diode for your specific needs.1. 1N4148 (200 words) The 1N4148 is one of the most widely used switch diodes due to its versatility and affordability. It is a small signal diode with a maximum forward current of 200mA and a reverse voltage of 100V. This diode is commonly employed in low-power applications, such as signal rectification, switching, and protection circuits. Its fast switching speed and low forward voltage drop make it suitable for high-frequency applications.2. 1N4007 (200 words) The 1N4007 is a popular general-purpose rectifier diode that can handle higher currents and voltages compared to the 1N4148. With a maximum forward current of 1A and a reverse voltage of 1000V, it is commonly used in power supply circuits, battery chargers, and motor control circuits. Its robust construction and low leakage current make it suitable for applications requiring higher power handling capabilities.3. Schottky Diodes (250 words) Schottky diodes, named after the German physicist Walter H. Schottky, are known for their low forward voltage drop and fast switching characteristics. They are widely used in high-frequency applications, such as RF circuits, power converters, and voltage clamping circuits. The most popular Schottky diode models include the 1N5819 and the BAT54.The 1N5819 is a general-purpose Schottky diode with a maximum forward current of 1A and a reverse voltage of 40V. It is commonly used in low voltage rectification, reverse polarity protection, and freewheeling diode applications. Its low forward voltage drop (typically around 0.45V) makes it suitable for applications where power efficiency is crucial.The BAT54 is a dual Schottky diode with two independent diodes in a single package. It is commonly used in high-speed switching applications, such as digital logic circuits, signal rectification, and voltage clamping. With a maximum forward current of 200mA and a reverse voltage of 30V, the BAT54 offers excellent performance in a compact package.4. Zener Diodes (250 words) Zener diodes are specifically designed to operate in the reverse breakdown region, maintaining a constant voltage across their terminals. They are commonly used in voltage regulation, voltage reference, and surge protection circuits. The most popular Zener diode models include the 1N4733A and the BZX55C.The 1N4733A is a 5.1V Zener diode with a maximum power dissipation of 1W. It is commonly used as a voltage reference or voltage regulator in various electronic circuits. Its low dynamic impedance and precise voltage regulation make it suitable for applications requiring stable voltage levels.The BZX55C is a series of Zener diodes available in various voltage ratings. With a maximum power dissipation of 500mW, it is commonly used in low-power applications, such as voltage clamping, voltage regulation, and surge protection. Its compact size and wide range of voltage options make it a versatile choice for many electronic designs.Conclusion (100 words) Switch diodes are essential components in electronic circuits, enabling the control and direction of current flow. In this article, we explored some of the most popular switch diode models, including the 1N4148, 1N4007, Schottky diodes (1N5819 and BAT54), and Zener diodes (1N4733A and BZX55C). Each model offers unique features and specifications suitable for specific applications. By understanding their characteristics, engineers and hobbyists can make informed decisions when selecting the appropriate switch diode for their projects.